Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220SIS
Timp montare
Through Hole
Numar pini
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Base Current
1A
Inaltime
15mm
Latime
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensiuni
10 x 4.5 x 15mm
Tara de origine
Japan
Detalii produs
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,74
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,881
Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 0,74
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,881
Buc. (Intr-un pachet de 10) (cu TVA)
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 20 | € 0,74 | € 7,40 |
30+ | € 0,61 | € 6,10 |
Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Tip pachet
TO-220SIS
Timp montare
Through Hole
Numar pini
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Temperatura maxima de lucru
+150 °C
Lungime
10mm
Base Current
1A
Inaltime
15mm
Latime
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensiuni
10 x 4.5 x 15mm
Tara de origine
Japan
Detalii produs