Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Tip pachet
TO-220SIS
Montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10 x 4.5 x 15mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Japan
Detalii produs
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,42
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,69
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,42
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,69
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 1,42 | € 7,10 |
25+ | € 1,17 | € 5,85 |
Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum DC Collector Current
12 A
Maximum Collector Emitter Voltage
80 V
Tip pachet
TO-220SIS
Montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
80 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10 x 4.5 x 15mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Japan
Detalii produs