Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-12 A
Maximum Collector Emitter Voltage
-80 V
Tip pachet
TO-220SIS
Timp montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
50 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10 x 4.5 x 15mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Japan
Detalii produs
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
€ 7,55
€ 1,51 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,14
€ 1,827 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 7,55
€ 1,51 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,14
€ 1,827 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 1,51 | € 7,55 |
| 25+ | € 1,27 | € 6,35 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-12 A
Maximum Collector Emitter Voltage
-80 V
Tip pachet
TO-220SIS
Timp montare
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
50 MHz
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
10 x 4.5 x 15mm
Temperatura maxima de lucru
+150 °C
Tara de origine
Japan
Detalii produs


