Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Latime
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Inaltime
0.95mm
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P.O.A.
5000
P.O.A.
5000
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
393 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
890 μΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
5mm
Latime
5mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Forward Diode Voltage
1.2V
Inaltime
0.95mm