Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaPower Switch Topology
High Side
Power Switch Type
High Side Switch
Switch On Resistance
1.2Ω
Maximum Operating Supply Voltage
40 V
Numar iesiri
8
Putere
1.2W
Timp montare
Surface Mount
Tip pachet
SSOP
Numar pini
24
Temperatura maxima de lucru
+85 °C
Temperatura minima de lucru
-40 °C
Dimensiuni
13.5 x 6 x 1.4mm
Detalii produs
Intelligent Power Devices (IPDs), Toshiba
Power and Load Switches, Toshiba
Integrated High-side and Low-side Intelligent Power Switching circuits incorporating many functional and protective features such as over-current, over-voltage, short-circuit, open-circuit load, over-temperature and supply reversal. These highly integrated devices utilise low on-resistance MOSFET transistors to minimise power losses and maintain high efficiency.
€ 137,75
€ 5,51 Buc. (Livrat pe rola) (fara TVA)
€ 166,68
€ 6,67 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
€ 137,75
€ 5,51 Buc. (Livrat pe rola) (fara TVA)
€ 166,68
€ 6,67 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
25
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar |
---|---|
25 - 99 | € 5,51 |
100 - 249 | € 5,31 |
250 - 499 | € 5,13 |
500+ | € 4,96 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaPower Switch Topology
High Side
Power Switch Type
High Side Switch
Switch On Resistance
1.2Ω
Maximum Operating Supply Voltage
40 V
Numar iesiri
8
Putere
1.2W
Timp montare
Surface Mount
Tip pachet
SSOP
Numar pini
24
Temperatura maxima de lucru
+85 °C
Temperatura minima de lucru
-40 °C
Dimensiuni
13.5 x 6 x 1.4mm
Detalii produs
Intelligent Power Devices (IPDs), Toshiba
Power and Load Switches, Toshiba
Integrated High-side and Low-side Intelligent Power Switching circuits incorporating many functional and protective features such as over-current, over-voltage, short-circuit, open-circuit load, over-temperature and supply reversal. These highly integrated devices utilise low on-resistance MOSFET transistors to minimise power losses and maintain high efficiency.