Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Serie
TK
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
12.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Latime
4.45mm
Transistor Material
Si
Inaltime
15.1mm
Detalii produs
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,26
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,499
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 1,26
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,499
Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
80 V
Serie
TK
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
12.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
72 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.16mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Latime
4.45mm
Transistor Material
Si
Inaltime
15.1mm
Detalii produs