Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Latime
1.3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Inaltime
0.9mm
Forward Diode Voltage
1.1V
Tara de origine
Thailand
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,05
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,06
Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 0,05
Buc. (Pe o rola de 3000) (fara TVA)
€ 0,06
Buc. (Pe o rola de 3000) (cu TVA)
3000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
3000 - 3000 | € 0,05 | € 150,00 |
6000 - 6000 | € 0,04 | € 120,00 |
9000+ | € 0,04 | € 120,00 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.75 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
1 W
Maximum Gate Source Voltage
±20 V
Latime
1.3mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
2.9mm
Typical Gate Charge @ Vgs
0.39 nC @ 4.5 V
Inaltime
0.9mm
Forward Diode Voltage
1.1V
Tara de origine
Thailand