Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-723
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Latime
1.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
0.8mm
Inaltime
0.5mm
Tara de origine
Thailand
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,05
Buc. (Pe o rola de 8000) (fara TVA)
€ 0,06
Buc. (Pe o rola de 8000) (cu TVA)
8000
€ 0,05
Buc. (Pe o rola de 8000) (fara TVA)
€ 0,06
Buc. (Pe o rola de 8000) (cu TVA)
8000
Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
---|---|---|
8000 - 8000 | € 0,05 | € 400,00 |
16000+ | € 0,04 | € 320,00 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-723
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
5.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±10 V
Latime
1.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
0.8mm
Inaltime
0.5mm
Tara de origine
Thailand