Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.25mm
Inaltime
0.9mm
Tara de origine
Thailand
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P.O.A.
3000
P.O.A.
3000
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
1.25mm
Inaltime
0.9mm
Tara de origine
Thailand