Documente tehnice
Specificatii
Marca
ToshibaChannel Type
P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-723
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
32 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.7V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
0.8mm
Inaltime
0.5mm
Tara de origine
Japan
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P.O.A.
8000
P.O.A.
8000
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
P
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-723
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
32 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.7V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Latime
1.2mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
0.8mm
Inaltime
0.5mm
Tara de origine
Japan