Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-346 (SC-59)
Numar pini
3
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+125 °C
Lungime
2.9mm
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,41
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,488
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 0,41
Buc. (Intr-un pachet de 10) (fara TVA)
€ 0,488
Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 0,41 | € 4,10 |
100+ | € 0,25 | € 2,50 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3.0mA
Maximum Drain Source Voltage
10 V
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
-50V
Transistor Configuration
Single
Configuration
Single
Montare
Surface Mount
Tip pachet
SOT-346 (SC-59)
Numar pini
3
Dimensiuni
2.9 x 1.5 x 1.1mm
Temperatura maxima de lucru
+125 °C
Lungime
2.9mm
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Latime
1.5mm
Detalii produs
N-channel JFET, Toshiba
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.