Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Tip pachet
TO-3P
Timp montare
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
15.5 x 4.5 x 20mm
Tara de origine
China
Detalii produs
NPN Power Transistors, Toshiba
Bipolar Transistors, Toshiba
€ 10,55
€ 2,11 Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,55
€ 2,511 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 10,55
€ 2,11 Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,55
€ 2,511 Buc. (Intr-un pachet de 5) (cu TVA)
5
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 2,11 | € 10,55 |
25 - 45 | € 1,58 | € 7,90 |
50 - 120 | € 1,40 | € 7,00 |
125 - 245 | € 1,28 | € 6,40 |
250+ | € 1,23 | € 6,15 |
Documente tehnice
Specificatii
Marca
ToshibaTransistor Type
NPN
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
230 V
Tip pachet
TO-3P
Timp montare
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
230 V
Maximum Emitter Base Voltage
5 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Dimensiuni
15.5 x 4.5 x 20mm
Tara de origine
China
Detalii produs