Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-120 V
Tip pachet
SOT-346 (SC-59)
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-5 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+125 °C
Dimensiuni
2.9 x 1.5 x 1.1mm
Tara de origine
Japan
Detalii produs
Small Signal PNP Transistors, Toshiba
Bipolar Transistors, Toshiba
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
50
P.O.A.
Buc. (Intr-un pachet de 50) (fara TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-120 V
Tip pachet
SOT-346 (SC-59)
Timp montare
Surface Mount
Maximum Power Dissipation
150 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-120 V
Maximum Emitter Base Voltage
-5 V
Numar pini
3
Number of Elements per Chip
1
Temperatura maxima de lucru
+125 °C
Dimensiuni
2.9 x 1.5 x 1.1mm
Tara de origine
Japan
Detalii produs


