Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Curent iesire
4.5A
Numar pini
8
Tip pachet
SOIC
Fall Time
15ns
Numar iesiri
2
Driver Type
MOSFET
Rise Time
20ns
Tensiune de alimentare minima
15V
Tensiune de alimentare maxima
15V
Number of Drivers
2
Frecventa minima de auto-rezonanta
-40°C
Temperatura maxima de lucru
125°C
Latime
3.91 mm
Serie
UCC2732
Inaltime
1.58mm
Lungime
4.9mm
Standards/Approvals
No
Montare
Surface
Automotive Standard
No
Tara de origine
Mexico
Detalii produs
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.
MOSFET & IGBT Drivers, Texas Instruments
Informatii despre stoc temporar indisponibile
€ 84,75
€ 1,13 Each (In a Tube of 75) (fara TVA)
€ 102,55
€ 1,367 Each (In a Tube of 75) (cu TVA)
75
€ 84,75
€ 1,13 Each (In a Tube of 75) (fara TVA)
€ 102,55
€ 1,367 Each (In a Tube of 75) (cu TVA)
Informatii despre stoc temporar indisponibile
75
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Curent iesire
4.5A
Numar pini
8
Tip pachet
SOIC
Fall Time
15ns
Numar iesiri
2
Driver Type
MOSFET
Rise Time
20ns
Tensiune de alimentare minima
15V
Tensiune de alimentare maxima
15V
Number of Drivers
2
Frecventa minima de auto-rezonanta
-40°C
Temperatura maxima de lucru
125°C
Latime
3.91 mm
Serie
UCC2732
Inaltime
1.58mm
Lungime
4.9mm
Standards/Approvals
No
Montare
Surface
Automotive Standard
No
Tara de origine
Mexico
Detalii produs
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.


