Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Curent iesire
1.5A
Numar pini
8
Fall Time
60ns
Tip pachet
PDIP
Numar iesiri
2
Driver Type
MOSFET
Rise Time
80ns
Tensiune de alimentare minima
40V
Number of Drivers
2
Tensiune de alimentare maxima
40V
Temperatura minima de lucru
0°C
Temperatura maxima de lucru
70°C
Lungime
9.81mm
Standards/Approvals
No
Latime
6.35 mm
Serie
UC3709
Inaltime
4.57mm
Montare
Through Hole
Automotive Standard
No
Tara de origine
Malaysia
Detalii produs
MOSFET & IGBT Drivers, up to 2.5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.
MOSFET & IGBT Drivers, Texas Instruments
Informatii despre stoc temporar indisponibile
€ 540,00
€ 10,80 Each (In a Tube of 50) (fara TVA)
€ 653,40
€ 13,068 Each (In a Tube of 50) (cu TVA)
50
€ 540,00
€ 10,80 Each (In a Tube of 50) (fara TVA)
€ 653,40
€ 13,068 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Curent iesire
1.5A
Numar pini
8
Fall Time
60ns
Tip pachet
PDIP
Numar iesiri
2
Driver Type
MOSFET
Rise Time
80ns
Tensiune de alimentare minima
40V
Number of Drivers
2
Tensiune de alimentare maxima
40V
Temperatura minima de lucru
0°C
Temperatura maxima de lucru
70°C
Lungime
9.81mm
Standards/Approvals
No
Latime
6.35 mm
Serie
UC3709
Inaltime
4.57mm
Montare
Through Hole
Automotive Standard
No
Tara de origine
Malaysia
Detalii produs
MOSFET & IGBT Drivers, up to 2.5A, Texas Instruments
A range of dedicated Gate Driver ICs from Texas Instruments suitable for both MOSFET and IGBT applications. The devices are capable of providing suitable high current outputs compatible with the drive requirements of MOSFET and IGBT power devices and are available in a variety of configurations and package types.


