Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
30 V
Tip pachet
LSON-CLIP
Dimensiune celula
NexFET
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
12 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Temperatura maxima de lucru
+125 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
18 nC, 40 nC
Latime
5.1mm
Number of Elements per Chip
2
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs
Power MOSFET Modules, Texas Instruments
MOSFET Transistors, Texas Instruments
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5
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
30 V
Tip pachet
LSON-CLIP
Dimensiune celula
NexFET
Montare
Surface Mount
Numar pini
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
12 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Temperatura maxima de lucru
+125 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
18 nC, 40 nC
Latime
5.1mm
Number of Elements per Chip
2
Inaltime
1.5mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs