Dual P-Channel MOSFET, 60 A, 30 V, 8-Pin VSON Texas Instruments CSD87334Q3DT
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
NexFET
Tip pachet
VSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Latime
3.4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs
Power MOSFET Modules, Texas Instruments
MOSFET Transistors, Texas Instruments
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5
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
NexFET
Tip pachet
VSON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
6 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Latime
3.4mm
Number of Elements per Chip
2
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
10.5 nC
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs