P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Number of Elements per Chip
1
Latime
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,19
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,416
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,19
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,416
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 10 | € 1,19 | € 5,95 |
15 - 45 | € 0,92 | € 4,60 |
50 - 245 | € 0,80 | € 4,00 |
250 - 495 | € 0,69 | € 3,45 |
500+ | € 0,61 | € 3,05 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Number of Elements per Chip
1
Latime
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs