N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Detalii produs