Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Latime
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
118 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.51mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,31
Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,319
Buc. (Intr-un pachet de 2) (cu TVA)
2
€ 5,31
Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,319
Buc. (Intr-un pachet de 2) (cu TVA)
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 24 | € 5,31 | € 10,62 |
26+ | € 4,15 | € 8,30 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Latime
4.7mm
Transistor Material
Si
Typical Gate Charge @ Vgs
118 nC @ 10 V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.51mm
Detalii produs