Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Dimensiune celula
NexFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Latime
4.7mm
Number of Elements per Chip
1
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
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€ 4,68
Each (In a Tube of 50) (fara TVA)
€ 5,569
Each (In a Tube of 50) (cu TVA)
50
€ 4,68
Each (In a Tube of 50) (fara TVA)
€ 5,569
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 4,68 | € 234,00 |
100 - 200 | € 3,60 | € 180,00 |
250+ | € 3,35 | € 167,50 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Dimensiune celula
NexFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Latime
4.7mm
Number of Elements per Chip
1
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs