Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Dimensiune celula
NexFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Latime
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
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€ 1,27
Each (In a Tube of 50) (fara TVA)
€ 1,511
Each (In a Tube of 50) (cu TVA)
50
€ 1,27
Each (In a Tube of 50) (fara TVA)
€ 1,511
Each (In a Tube of 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,27 | € 63,50 |
100 - 200 | € 1,11 | € 55,50 |
250 - 450 | € 1,04 | € 52,00 |
500 - 700 | € 0,97 | € 48,50 |
750+ | € 0,91 | € 45,50 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Dimensiune celula
NexFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Latime
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Philippines
Detalii produs