Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
5mm
Number of Elements per Chip
1
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 1,12
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,333
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 1,12
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,333
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 1,12 | € 5,60 |
25 - 95 | € 0,95 | € 4,75 |
100 - 245 | € 0,82 | € 4,10 |
250 - 495 | € 0,76 | € 3,80 |
500+ | € 0,71 | € 3,55 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
10.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Latime
5mm
Number of Elements per Chip
1
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs