Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Latime
4.7mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Number of Elements per Chip
1
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
NexFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Latime
4.7mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
10.67mm
Number of Elements per Chip
1
Inaltime
16.51mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs