N-Channel MOSFET, 349 A, 60 V, 3-Pin D2PAK Texas Instruments CSD18536KTTT
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
349 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Dimensiune celula
NexFET
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Latime
11.33mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
349 A
Maximum Drain Source Voltage
60 V
Tip pachet
D2PAK (TO-263)
Dimensiune celula
NexFET
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Lungime
10.67mm
Typical Gate Charge @ Vgs
230 nC @ 10 V
Latime
11.33mm
Number of Elements per Chip
1
Forward Diode Voltage
1V
Inaltime
4.83mm
Temperatura minima de lucru
-55 °C
Detalii produs