Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Transistor Material
Si
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Inaltime
1.1mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs