Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,97
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,154
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 0,97
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,154
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 20 | € 0,97 | € 4,85 |
25 - 45 | € 0,89 | € 4,45 |
50 - 120 | € 0,80 | € 4,00 |
125 - 245 | € 0,71 | € 3,55 |
250+ | € 0,67 | € 3,35 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Tip pachet
VSONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Latime
5mm
Transistor Material
Si
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Detalii produs