Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
VSCONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14.2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.5mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.5mm
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V
Inaltime
0.9mm
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
Philippines
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Tip pachet
VSCONP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
14.2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
3.5mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3.5mm
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V
Inaltime
0.9mm
Dimensiune celula
NexFET
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Tara de origine
Philippines
Detalii produs