Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
FemtoFET
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
0.64mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.04mm
Typical Gate Charge @ Vgs
1570 nC @ 0 V
Inaltime
0.2mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Detalii produs
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
250
P.O.A.
250
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Dimensiune celula
FemtoFET
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
270 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
0.64mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.04mm
Typical Gate Charge @ Vgs
1570 nC @ 0 V
Inaltime
0.2mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
0.9V
Detalii produs