Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
PICOSTAR
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
0.64mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.04mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Number of Elements per Chip
1
Inaltime
0.35mm
Dimensiune celula
FemtoFET
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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P.O.A.
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P.O.A.
250
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
30 V
Tip pachet
PICOSTAR
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Latime
0.64mm
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Lungime
1.04mm
Typical Gate Charge @ Vgs
1.01 nC @ 4.5 V
Number of Elements per Chip
1
Inaltime
0.35mm
Dimensiune celula
FemtoFET
Temperatura minima de lucru
-55 °C
Tara de origine
Malaysia
Detalii produs