Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Tip pachet
PICOSTAR
Dimensiune celula
FemtoFET
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Latime
0.64mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.35mm
Detalii produs
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,80
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,952
Buc. (Intr-un pachet de 20) (cu TVA)
20
€ 0,80
Buc. (Intr-un pachet de 20) (fara TVA)
€ 0,952
Buc. (Intr-un pachet de 20) (cu TVA)
20
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
20 - 20 | € 0,80 | € 16,00 |
40 - 80 | € 0,75 | € 15,00 |
100 - 480 | € 0,72 | € 14,40 |
500 - 980 | € 0,70 | € 14,00 |
1000+ | € 0,68 | € 13,60 |
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
30 V
Tip pachet
PICOSTAR
Dimensiune celula
FemtoFET
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Temperatura maxima de lucru
+150 °C
Lungime
1.04mm
Typical Gate Charge @ Vgs
1.04 nC @ 4.5 V
Number of Elements per Chip
1
Latime
0.64mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.35mm
Detalii produs