Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Latime
2mm
Transistor Material
Si
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.8mm
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
42 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
2mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Latime
2mm
Transistor Material
Si
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
0.8mm