N-Channel MOSFET, 50 A, 30 V, 8-Pin VSON-CLIP Texas Instruments CSD17308Q3T
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Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
7.4 nC
Latime
3.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Dimensiune celula
NexFET
Inaltime
1.1mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
7.4 nC
Latime
3.4mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Dimensiune celula
NexFET
Inaltime
1.1mm
Detalii produs