Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Latime
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Dimensiune celula
NexFET
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Tip pachet
SON
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Lungime
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Latime
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Dimensiune celula
NexFET
Detalii produs