Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Tip pachet
VSON-CLIP
Dimensiune celula
NexFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Number of Elements per Chip
1
Latime
5.1mm
Transistor Material
Si
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,142
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 0,96
Buc. (Intr-un pachet de 5) (fara TVA)
€ 1,142
Buc. (Intr-un pachet de 5) (cu TVA)
5
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Tip pachet
VSON-CLIP
Dimensiune celula
NexFET
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Temperatura maxima de lucru
+150 °C
Lungime
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Number of Elements per Chip
1
Latime
5.1mm
Transistor Material
Si
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs