Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Dimensiune celula
NexFET
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii indisponibile despre stoc
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Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 0,91
Buc. (Pe o rola de 2500) (fara TVA)
€ 1,083
Buc. (Pe o rola de 2500) (cu TVA)
2500
Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
25 V
Dimensiune celula
NexFET
Tip pachet
VSON-CLIP
Montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
3.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Transistor Material
Si
Lungime
6.1mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Latime
5.1mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
1.05mm
Frecventa minima de auto-rezonanta
-55 °C
Tara de origine
Malaysia
Detalii produs