Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Lungime
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Temperatura maxima de lucru
+150 °C
Latime
1.04mm
Transistor Material
Si
Dimensiune celula
FemtoFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Inaltime
0.35mm
Detalii produs
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Tip pachet
PICOSTAR
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Lungime
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Temperatura maxima de lucru
+150 °C
Latime
1.04mm
Transistor Material
Si
Dimensiune celula
FemtoFET
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1V
Inaltime
0.35mm
Detalii produs