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Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Tip pachet
DSBGA
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Lungime
1.5mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Latime
1mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
0.38mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Tip pachet
DSBGA
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
1.65 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Lungime
1.5mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Latime
1mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
0.38mm
Dimensiune celula
NexFET
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs