Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
600 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Latime
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.13V
Inaltime
2.28mm
Temperatura minima de lucru
-55 °C
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P.O.A.
2500
P.O.A.
2500
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
600 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Latime
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.13V
Inaltime
2.28mm
Temperatura minima de lucru
-55 °C