Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-26
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
9.52 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Tara de origine
China
Detalii produs
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-26
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
9.52 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
3.1mm
Latime
1.7mm
Transistor Material
Si
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1.1mm
Tara de origine
China
Detalii produs