Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
192 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
3.99 nC @ 4.5 V
Latime
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C
Informatii indisponibile despre stoc
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Buc. (Intr-un pachet de 50) (fara TVA)
€ 0,369
Buc. (Intr-un pachet de 50) (cu TVA)
50
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
50 - 200 | € 0,31 | € 15,50 |
250 - 450 | € 0,29 | € 14,50 |
500 - 950 | € 0,28 | € 14,00 |
1000+ | € 0,27 | € 13,50 |
Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
192 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
3mm
Typical Gate Charge @ Vgs
3.99 nC @ 4.5 V
Latime
1.4mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Inaltime
1.05mm
Temperatura minima de lucru
-55 °C