Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-252
Montare
Surface Mount
Numar pini
3 + Tab
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.57mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V, 37 nC @ 10 V
Latime
6.11mm
Number of Elements per Chip
1
Inaltime
2.29mm
Forward Diode Voltage
1V
Temperatura minima de lucru
-55 °C
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Documente tehnice
Specificatii
Marca
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
60 V
Tip pachet
TO-252
Montare
Surface Mount
Numar pini
3 + Tab
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Temperatura maxima de lucru
+150 °C
Lungime
6.57mm
Typical Gate Charge @ Vgs
18 nC @ 4.5 V, 37 nC @ 10 V
Latime
6.11mm
Number of Elements per Chip
1
Inaltime
2.29mm
Forward Diode Voltage
1V
Temperatura minima de lucru
-55 °C