Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Darlington Transistor
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
100V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain hFE
1000
Maximum Power Dissipation Pd
65W
Transistor Polarity
NPN
Maximum Emitter Base Voltage VEBO
5V
Frecventa minima de auto-rezonanta
-65°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Collector Base Voltage VCBO
100V
Temperatura maxima de lucru
150°C
Latime
4.6 mm
Inaltime
9.15mm
Lungime
10.4mm
Standards/Approvals
No
Serie
TIP122
Maximum Collector Cut-off Current
0.2mA
Automotive Standard
No
Detalii produs
TIP122 Darlington Transistors
STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.
The TIP122 devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informatii despre stoc temporar indisponibile
P.O.A.
Each (In a Tube of 50) (fara TVA)
50
P.O.A.
Each (In a Tube of 50) (fara TVA)
Informatii despre stoc temporar indisponibile
50
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Darlington Transistor
Maximum Continuous Collector Current Ic
5A
Maximum Collector Emitter Voltage Vceo
100V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Number of Elements per Chip
1
Minimum DC Current Gain hFE
1000
Maximum Power Dissipation Pd
65W
Transistor Polarity
NPN
Maximum Emitter Base Voltage VEBO
5V
Frecventa minima de auto-rezonanta
-65°C
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Collector Base Voltage VCBO
100V
Temperatura maxima de lucru
150°C
Latime
4.6 mm
Inaltime
9.15mm
Lungime
10.4mm
Standards/Approvals
No
Serie
TIP122
Maximum Collector Cut-off Current
0.2mA
Automotive Standard
No
Detalii produs
TIP122 Darlington Transistors
STMicroelectronics presents its TIP122 range of Darlington pairs. Darlington pairs or transistors are a package of two standard BJT transistors that are used to amplify weak signals from one circuit to another circuit or microprocessor.
The TIP122 devices are manufactured in planar technology with base island layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


