Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-247
Dimensiune celula
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.15mm
Transistor Material
Si
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Inaltime
20.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-247
Dimensiune celula
MDmesh, SuperMESH
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.15mm
Transistor Material
Si
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
15.75mm
Inaltime
20.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs