Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
500 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
3.04 x 1.75 x 1.3mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Informatii despre stoc temporar indisponibile
€ 420,00
€ 0,14 Buc. (Pe o rola de 3000) (fara TVA)
€ 508,20
€ 0,169 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 420,00
€ 0,14 Buc. (Pe o rola de 3000) (fara TVA)
€ 508,20
€ 0,169 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
500 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
9 V
Numar pini
3
Number of Elements per Chip
1
Dimensiuni
3.04 x 1.75 x 1.3mm
Temperatura maxima de lucru
+150 °C
Tara de origine
China
Detalii produs
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


