Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
STripFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Latime
4.6mm
Typical Gate Charge @ Vgs
13 nC @ 5 V
Transistor Material
Si
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 0,81
Buc. (Intr-un pachet de 5) (fara TVA)
€ 0,964
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 0,81
Buc. (Intr-un pachet de 5) (fara TVA)
€ 0,964
Buc. (Intr-un pachet de 5) (cu TVA)
5
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
STripFET
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Latime
4.6mm
Typical Gate Charge @ Vgs
13 nC @ 5 V
Transistor Material
Si
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs