Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Dimensiune celula
MDmesh
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Latime
4.6mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
9.3mm
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
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€ 8,98
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€ 8,98
Buc. (cu TVA)
1
Cumpara in pachete mari
Cantitate | Pret unitar |
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1 - 9 | € 7,55 |
10 - 99 | € 6,25 |
100 - 499 | € 5,01 |
500 - 999 | € 4,46 |
1000+ | € 3,78 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Dimensiune celula
MDmesh
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
290 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Latime
4.6mm
Transistor Material
Si
Temperatura minima de lucru
-65 °C
Inaltime
9.3mm
Detalii produs