Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Dimensiune celula
MDmesh, SuperMESH
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Lungime
10.4mm
Temperatura minima de lucru
-55 °C
Inaltime
9.3mm
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 3,45
Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,106
Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 3,45
Buc. (Intr-un pachet de 5) (fara TVA)
€ 4,106
Buc. (Intr-un pachet de 5) (cu TVA)
5
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
5 - 5 | € 3,45 | € 17,25 |
10 - 95 | € 2,84 | € 14,20 |
100 - 495 | € 2,23 | € 11,15 |
500 - 995 | € 1,90 | € 9,50 |
1000+ | € 1,59 | € 7,95 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Dimensiune celula
MDmesh, SuperMESH
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Lungime
10.4mm
Temperatura minima de lucru
-55 °C
Inaltime
9.3mm
Detalii produs