Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
STripFET
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
7 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Latime
3.5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.8mm
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
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Cumpara in pachete mari
Cantitate | Pret unitar | Per Rola |
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5 - 5 | € 0,52 | € 2,60 |
10 - 20 | € 0,44 | € 2,20 |
25 - 95 | € 0,41 | € 2,05 |
100 - 495 | € 0,30 | € 1,50 |
500+ | € 0,25 | € 1,25 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
60 V
Dimensiune celula
STripFET
Tip pachet
SOT-223
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
7 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.5mm
Latime
3.5mm
Transistor Material
Si
Temperatura minima de lucru
-55 °C
Inaltime
1.8mm
Detalii produs