Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Inaltime
0.95mm
Dimensiune celula
STripFET
Forward Diode Voltage
1.1V
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 0,94
Buc. (Pe o rola de 3000) (fara TVA)
€ 1,119
Buc. (Pe o rola de 3000) (cu TVA)
3000
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
60 V
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5.4mm
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
6.35mm
Typical Gate Charge @ Vgs
30 nC @ 4.5 V
Inaltime
0.95mm
Dimensiune celula
STripFET
Forward Diode Voltage
1.1V
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.